sod-123 plastic-encapsulate diode s B5817W-5819w schottky barrier diode features for use in low voltage, high frequency inverters free wheeling, and polarity protection applications. marking: B5817W: sj b5818w:sk b5819w: sl maximum ratings and electrical characteristics, single diode @t a =25 parameter symbol B5817W b5818w b5819w unit non-repetitive peak r everse v oltage v rm 20 30 40 v peak r epetitive peak r everse v oltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage v r(rms) 14 21 28 v average rectified output current i o 1 a peak f orward s urge c urrent @ t =8.3ms i fsm 9 a repetitive peak forward current i frm 1.5 a power dissipation pd 50 0 mw thermal resistance junction to ambient r ja 2 50 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions m in m ax u nit reverse breakdown voltage v (br) i r = 1ma B5817W b5818w b5819w 20 30 40 v reverse voltage leakage current i r v r =20v B5817W v r =30v b5818w v r =40v b5819w 1 ma B5817W i f =1a i f =3a 0.45 0.75 v b5818w i f =1a i f =3a 0.55 0.875 v forward voltage v f b5819w i f =1a i f =3a 0.6 0.9 v diode capacitance c d v r =4v, f=1mhz 120 pf sod-123 /w 1 storage t emperatur e t stg - 5 5~+150 junction temperature t j 1 2 5 baidu micro electrons co., ltd. b,jul,2012
0.1 1 10 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 0 1 02 03 04 0 1e-3 0.01 0.1 1 10 t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) 20 power derating curve power dissipation p d (mw) ambient temperature t a ( ) forward characteristics t a =100 t a =25 forward current i f (a) forward voltage v f (v) reverse characteristics t a =100 t a =25 reverse current i r (ma) reverse voltage v r (v) 1 b,jul,2012 sod-123 plastic-encapsulate diode s baidu micro electrons co., ltd. B5817W-5819w 2 b,jul,2012
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